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FESB16AT PDF预览

FESB16AT

更新时间: 2024-09-10 02:58:15
品牌 Logo 应用领域
THINKISEMI 二极管
页数 文件大小 规格书
2页 382K
描述
16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode

FESB16AT 数据手册

 浏览型号FESB16AT的Datasheet PDF文件第2页 
FESB16AT thru FESB16NT  
Pb Free Plating Product  
FESB16AT thru FESB16NT  
16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode  
TO-263AB/D2PAK  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
Mechanical Data  
Case:Surface Mount TO-263AB/D2PAK package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Internal Configuration  
Base Backside  
Base Backside  
Negative  
Suffix "TR"  
Weight: 2.0 gram approximately  
Positive  
Suffix "T"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
FESB16AT  
FESB16BT  
FESB16CT  
FESB16DT  
FESB16ET  
FESB16FT  
FESB16GT  
FESB16HT  
FESB16IT  
FESB16JT  
FESB16KT  
FESB16LT  
PARAMETER  
SYMBOL  
FESB16MT  
FESB16NT  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
V
V
V
840  
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
16.0  
300  
IF(AV)  
IFSM  
A
A
V
(Total Device 16.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@16.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
160  
1.5  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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