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FES16FT PDF预览

FES16FT

更新时间: 2024-11-27 22:31:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管
页数 文件大小 规格书
3页 39K
描述
16 Ampere Glass Passivated Super Fast Rectifiers

FES16FT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220
包装说明:R-PSFM-T2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.4
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:16 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大功率耗散:7.81 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

FES16FT 数据手册

 浏览型号FES16FT的Datasheet PDF文件第2页浏览型号FES16FT的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
FES16AT - FES16JT  
.185(4.70)  
.175(4.44)  
.412(10.5)  
MAX  
DIA  
.154(3.91)  
.148(3.74)  
.055(1.40)  
.045(1.14)  
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
Features  
PIN 1 +  
PIN 2 -  
.594(15.1)  
.587(14.91)  
+
Low forward voltage drop.  
High surge current capacity.  
High current capability.  
High reliability.  
CASE  
CASE Positive  
1
2
.16(4.06)  
.14(3.56)  
.11(2.79)  
.10(2.54)  
PIN 1 -  
PIN 2 +  
+
.56(14.22)  
.53(13.46)  
.037(0.94)  
.027(0.68)  
CASE Negative  
Suffix “R”  
TO-220AC  
.205(5.20)  
.195(4.95)  
Dimensions are in:  
inches (mm)  
.025(0.64)  
.014(0.35)  
16 Ampere Glass Passivated Super Fast Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
16  
A
.375 " lead length @ T = 100 C  
°
A
Peak Forward Surge Current  
if(surge)  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
250  
A
PD  
7.81  
62  
W
mW/ C  
°
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Lead  
Storage Temperature Range  
16  
Rθ  
C/W  
°
JA  
1.2  
Rθ  
C/W  
°
JL  
-65 to +150  
-65 to +150  
C
C
°
Tstg  
TJ  
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
16AT 16BT 16CT 16DT 16FT 16GT 16HT  
16JT  
600  
420  
600  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
V
V
V
100  
DC Blocking Voltage  
Maximum Reverse Current  
@ rated VR T = 25 C  
(Rated VR)  
A
µ
µ
°
10  
500  
A
A
T = 100 C  
A
°
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
Maximum Forward Voltage @ 16.0A  
35  
0.975  
50  
nS  
V
1.3  
1.5  
Typical Junction Capacitance  
VR = 4.0. f = 1.0 MHz  
170  
145  
pF  
1999 Fairchild Semiconductor Corporation  
FES16AT - FES16JT, Rev. A  

FES16FT 替代型号

型号 品牌 替代类型 描述 数据表
FES16FTR FAIRCHILD

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FES16GT-E3/45 VISHAY

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DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,

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