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FES16ET PDF预览

FES16ET

更新时间: 2024-11-29 02:50:31
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THINKISEMI /
页数 文件大小 规格书
2页 260K
描述
16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode

FES16ET 数据手册

 浏览型号FES16ET的Datasheet PDF文件第2页 
FES16AT thru FES16NT  
Pb Free Plating Product  
FES16AT thru FES16NT  
16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode  
TO-220AC(TO-220-2L)  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: TO-220AC(TO-220-2L) with heat sink package  
Epoxy: UL 94V-0 rate flame retardant  
Internal Configuration  
Base Backside  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Base Backside  
Weight: 2.0 gram approximately  
Negative  
Positive  
Suffix "T"  
Suffix "TR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
FES16AT  
FES16BT  
FES16CT  
FES16DT  
FES16ET  
FES16FT  
FES16GT  
FES16HT  
FES16IT  
FES16JT  
FES16KT  
FES16LT  
PARAMETER  
SYMBOL  
FES16MT  
FES16NT  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
16.0  
300  
IF(AV)  
IFSM  
A
A
V
(Total Device 16.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@16.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
160  
1.50  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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