Datasheet > FEP30JP

FEP30JP

更新时间： 2024-02-20 08:35:01

品牌	Logo	应用领域
赛灵思 - XILINX		/
页数	文件大小	规格书
11页	256K
描述
30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

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中文翻译

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技术参数
数据手册

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FEP30JP 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.83
Is Samacsys：	N	Base Number Matches：	1

FEP30JP 数据手册

DDR2-400, 533

Single Rank, x8 Registered SDRAM DIMMs

256MB - W1D32M72R8

512MB - W1D64M72R8

1GB

2GB

- W1D128M72R8

- W1D256M72R8 (Preliminary*)

Features:

Figure 1: Available layouts

Layout A:

•

240-pin Registered ECC DDR2 SDRAM Dual-In-

Line Memory Module for DDR2-400 and DDR2-533

JEDEC standard VDD=1.8V (+/- 0.1V) power

supply

One rank 256MB, 512MB, 1GB, and 2GB

Modules are built with 18 x8 DDR2 SDRAM

devices in a 60-ball FBGA package

ECC error detection and correction

Programmable CAS Latency of 3 and 4; Burst

Length of 4 and 8

Auto Refresh and Self Refresh Mode

OCD (Off-Chip Driver Impedance Adjustment) and

ODT (On-Die Termination)

SPD (Serial Presence Detect) with EEPROM

All input/output are SSTL_18 compatible

All contacts are gold plated

•

1.181"

•

Layout B:

•

1.0"

•

Front view of double-sided DIMM (see detail physical dimensions

at the back)

•

Speed Grades:

Speed Grade

-5

-3.75

Units

One clock delay for register

Module Speed Grade

PC2-3200 PC2-4200

Speed @ CL3

Speed @ CL4

Speed @ CL5

400

MHz

533

Note: See Product ordering for full naming guide

Description:

The following specification covers the W1D32M72R8, W1D64M72R8, W1D128M72R8, and W1D256M72R8

family of Single-Rank Registered ECC DDR2 modules using x8 FBGA SDRAMs. Please reference Figure 1 for

available layout configurations and the product ordering guide on the final page of this specification for available

options including speed grade and silicon manufacturer.

Address Summary Table:

256MB

32M x 72

512MB

64M x 72

1GB

128M x 72

2GB

256M x 72

Module Configuration

Refresh

Device Configuration

32M x 8

(9 components)

A0-A13

A0-A9

64M x 8

(9 components)

A0-A13

A0-A9

128M x 8

(9 components)

A0-A14

A0-A9

256M x 8

(9 components)

A0-A14

A0-A9

Row Addressing

Column Addressing

Module Rank

*Specifications are for reference purposes only and are subject to change by Wintec without notice.

DDR2_RDIMM_1 rank_x8_spec

Rev. 1.0 - December, 04

Wintec Industries, Inc., reserves the right to change datasheets and/or products without any notice.

 2004 Wintec Industries, Inc.

12 3 4 5 6 7...11

中文翻译

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与FEP30JP相关器件

型号	品牌	获取价格	描述	数据表
FEP30JP-E3	VISHAY	获取价格	Dual Common Cathode Ultrafast Rectifier
FEP30JP-E3/45	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 P
FEP30JP-E3-45	VISHAY	获取价格	Dual Common Cathode Ultrafast Rectifier
FEP30XP-E3	VISHAY	获取价格	Dual Common Cathode Ultrafast Rectifier
FEP6	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FEP6AT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FEP6ATHE3/45	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
FEP6BT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FEP6BT-HE3/45	VISHAY	获取价格	DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FEP6CT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER

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