Datasheet > FDZ4670

FDZ4670

更新时间： 2024-11-25 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	285K
描述
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ

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中文翻译

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数据手册

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FDZ4670 数据手册

May 2007

FDZ4670

N-Channel PowerTrench^®MOSFET BGA

30V, 25A, 2.5mΩ

Features

General Description

Max r_DS(on)= 2.5mΩ at V_GS= 10V, I_D= 25A

Max r_DS(on)= 4.5mΩ at V_GS= 4.5V, I_D= 18.5A

Combining Farichild’s 30V PowerTrench process with state-of-

the-art BGA packaging, the FDZ4670 minimize both PCB space

and r_DS(on). This BGA MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, high current handing

capacity, ultra-low profile packaging, low gate charge and low

Ultra-thin package: less than 0.85mm height when mounted to

PCB

Outstanding thermal transfer characteristics

Ultra-low gate charge x r_DS(on)product

RoHS Compliant

r_DS(on)

This MOSFET feature faster switching and lower gate charge

than other MOSFETs with comparable r_DS(on)specifications

resulting in DC/DC power supply designs and POL converters

with higher overall efficiency.

Applications

DC - DC Conversion

POL converters

Index slot

Bottom

Top

FLFBGA 3.5X4.0

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current

-Continuous

-Pulsed

(Note 1a)

I_D

Power Dissipation

(Note 1a)

(Note 1b)

2.5

P_D

1.25

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

100

0.85

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

4670

FDZ4670

FLFBGA 3.5X4.0

3000 units

FDZ4670 RevD

www.fairchildsemi.com

12 3 4 5 6

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