FDZ3N513ZT

更新时间： 2024-11-25 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
7页	349K
描述
Integrated NMOS and Schottky Diode

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中文翻译

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数据手册
替代型号

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FDZ3N513ZT 数据手册

July 2010

FDZ3N513ZT

Integrated NMOS and Schottky Diode

Features

General Description

The FDZ3N513ZT is a monolithic NMOS/ Schottky combination

(FETky) and is designed and wired to function as a discontinu-

ous conduction mode (DCM) boost LED power train for mobile

LED backlighting applications.

Monolithic NMOS and Schottky Diode

Ultra-small form factor 1mm x 1mm WLCSP

Max r_DS(on)= 462 mΩ at V_GS= 4.5 V, I_D= 0.3 A

Max r_DS(on)= 520 mΩ at V_GS= 3.2 V, I_D= 0.3 A

HBM ESD protection level > 2000V (Note3)

RoHS Compliant

Application

Boost Converter Power Train for single cell Li-ion LED

backlighting

Pin 1

WL-CSP 1.0X1.0 Bumps Facing Up View

WL-CSP 3D Bumps Facing Down View

WL-CSP 3D Bumps Facing Up View

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DS

V_GS

P_D

NMOS Drain to Source Voltage

NMOS Gate to Source Voltage

Power Dissipation @ T_A= 25°C

-0.3/5.5

(Note 1a)

I_D

Maximum Continuous NMOS Drain Current

Schottky Repetitive Peak Reverse Voltage

Schottky Average Forward Current

1.1

V_RRM

I_O

0.3

T_J, T_STGOperating Junction and Storage Temperature

ESD Electrostatic Discharge Protection

-55/125

2000

°C

CDM

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient - 1in², 2oz. Copper

(Note 1a)

(Note 1b)

100

260

°C/W

Thermal Resistance, Junction to Ambient - Minimum Pad

Package Marking and Ordering Information

Part Number

Device Marking

Package

Reel Size

7”

Tape Width

8mm

Quantity

FDZ3N513ZT

WL-CSP 1.0X1.0

5000 units

FDZ3N513ZT Rev. C

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

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FDZ3N513ZT 替代型号

型号	品牌	替代类型	描述	数据表
FDZ3N513ZT	ONSEMI	功能相似	30V 集成式 NMOS 和肖特基二极管

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