Datasheet > FDV301N

FDV301N

更新时间： 2024-11-09 12:49:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
2页	218K
描述
SOT-23

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FDV301N 数据手册

SMD Type

Product specification

FDV301N

General Description

Features

25 V, 0.22 A continuous, 0.5 A Peak.

This N-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one N-channel FET can

replace several different digital transistors, with different bias

resistor values.

R_DS(ON)= 5 W @ V_GS= 2.7 V

R_DS(ON)= 4 W @ V_GS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V_GS(th)< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SO-8

SOIC-16

SOT-223

Mark:301

INVERTER APPLICATION

Vcc

OUT

GND

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol

Parameter

FDV301N

Units

V_DSS, V_CCDrain-Source Voltage, Power Supply Voltage

V_GSS, V_I

I_D, I_O

Gate-Source Voltage, V_IN

Drain/Output Current

- Continuous

0.22

0.5

P_D

Maximum Power Dissipation

0.35

°C

T_J,T_STG

ESD

Operating and Storage Temperature Range

-55 to 150

6.0

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

R_q_JA

Thermal Resistance, Junction-to-Ambient

357

°C/W

http://www.twtysemi.com

1 of 2

4008-318-123

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与FDV301N相关器件

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FDV301N-F169	ONSEMI	获取价格	N 沟道，数字 FET，25V，0.22A，4Ω
FDV301NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV301NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
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FDV302P	FAIRCHILD	获取价格	Digital FET, P-Channel
FDV302P	TYSEMI	获取价格	SOT-23
FDV302P	ONSEMI	获取价格	数字 FET，P 沟道，-25V，-0.12A，10Ω
FDV302P-NB8V001	FAIRCHILD	获取价格	Transistor
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FDV303	FAIRCHILD	获取价格	Digital FET, N-Channel