Datasheet > FDS9926A

FDS9926A

更新时间： 2024-09-16 12:36:11

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲光电二极管 PC
页数	文件大小	规格书
2页	304K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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FDS9926A 数据手册

Product specification

FDS9926A

Dual N-Channel 2.5V Specified PowerTrench MOSFET

Features

General Description

These N-Channel 2.5V specified MOSFETs use

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 10V).

• 6.5 A, 20 V.

R_DS(ON)= 0.030 Ω @ V_GS= 4.5 V

R_DS(ON)= 0.043 Ω @ V_GS= 2.5 V.

• Optimized for use in battery protection circuits

±10 V_GSSallows for wide operating voltage range

•

Applications

• Low gate charge

• Battery protection

• Load switch

• Power management

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±10

Drain Current – Continuous

– Pulsed

(Note 1a)

6.5

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

(Note 1c)

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2500 units

FDS9926A

13’’

12mm

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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FDS9926A_03	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS9926A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
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FDS9926AL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
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FDS9933	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933_06	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Meta