Datasheet > FDS6961AZ

FDS6961AZ

更新时间： 2024-09-22 23:51:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
5页	64K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 3.5A I(D) \| SO

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FDS6961AZ 数据手册

September 2001

FDS6961AZ

Dual N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

These N-Channel Logic Level MOSFETs are produced

· 3.5 A, 30 V.

R_DS(ON)= 90 mW @ V_GS= 10 V

R_DS(ON)= 140 mW @ V_GS= 4.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

· Low gate charge (2.1 nC typical)

· ESD protection diode (note 3)

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

· High performance trench technology for extremely

low R_DS(ON)

· High power and current handling capability

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

3.5

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2500 units

FDS6961AZ

13’’

12mm

Ó2001 Fairchild Semiconductor Corporation

FDS6961AZ Rev C (W)

12 3 4 5

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