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FDS6961 PDF预览

FDS6961

更新时间: 2024-09-22 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 242K
描述
Dual N-Channel Logic Level PowerTrenchTM MOSFET

FDS6961 数据手册

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April 1999  
FDS6961A  
Dual N-Channel Logic Level PowerTrenchTM MOSFET  
General Description  
Features  
3.5 A, 30 V. RDS(ON) = 0.090 W @ VGS = 10 V  
RDS(ON) = 0.140 W @ VGS = 4.5 V.  
Fast switching speed.  
These N-Channel Logic Level MOSFETs are  
produced using Fairchild Semiconductor's  
advanced PowerTrench process that has been  
especially tailored to minimize the on-state  
resistance and yet maintain superior switching  
performance.  
Low gate charge (2.1nC typical).  
High performance trench technology for extremely low  
These devices are well suited for low voltage  
and battery powered applications where low  
RDS(ON)  
.
in-line power loss and fast switching  
required.  
are  
High power and current handling capability.  
SuperSOTTM-6  
SO-8  
SOT-223  
SuperSOTTM-8  
SOIC-16  
SOT-23  
D2  
5
4
D2  
D1  
6
3
2
D1  
7
G2  
S2  
1
8
G1  
1
pin  
SO-8  
S1  
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
Units  
V
Drain-Source Voltage  
30  
Gate-Source Voltage  
±20  
V
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
3.5  
A
14  
PD  
Power Dissipation for Single Operation  
Power Dissipation for Single Operation  
(Note 1)  
2
1.6  
W
(Note 1a)  
(Note 1b)  
(Note 1c)  
1
0.9  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
78  
40  
°C/W  
°C/W  
(Note 1)  
© 1999 Fairchild Semiconductor Corporation  
FDS6961A Rev.C  

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