Datasheet > FDS6930B-SBNT001

FDS6930B-SBNT001

更新时间： 2024-09-23 14:50:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	532K
描述
Transistor

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技术参数
数据手册

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FDS6930B-SBNT001 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDS6930B-SBNT001 数据手册

June 2005

FDS6930B

Dual N-Channel Logic Level PowerTrench^®MOSFET

Features

General Description

■ 5.5 A, 30 V.

= 38 mΩ @ V = 10 V

These N-Channel Logic Level MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and yet maintain superior switching performance.

DS(ON)

= 50 mΩ @ V = 4.5 V

■ Fast switching speed

■ Low gate charge

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss and fast switch-

ing are required.

■ High performance trench technology for extremely

low R

DS(ON)

■ High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

DSS

GSS

Drain Current

– Continuous

– Pulsed

(Note 1a)

5.5

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1)

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T , T

Operating and Storage Junction Temperature Range

–55 to 150

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6930B

13"

12mm

2500 units

FDS6930B Rev. A

www.fairchildsemi.com

12 3 4 5

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