Datasheet > FDS6690A

FDS6690A

更新时间： 2024-09-24 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	454K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:11A;Vgs(th)(V):±20;漏源导通电阻:12.5mΩ@10V;漏源导通电阻:12.5mΩ@10V

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FDS6690A 数据手册

FDS6690A

30V N-Channel MOSFET

UMW

Features

•

VDS (V) = 30V

ID = 11 A

RDS(ON) ＜

•

(V_GS= 10V)

12.5m

Ω(V

=10V)

=4.5V)

17m

Ω(V

•

Fast switching speed

Low gate charge

High performance trench technology for extremely

low R_DS(ON)

•

High power and current handling capability

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

±20

V_GSS

Gate-Source Voltage

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.0

P_D

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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