FDR4410

更新时间： 2024-11-05 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	223K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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FDR4410 数据手册

April 1998

FDR4410

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The FDR4410 has been designed as a smaller, low cost

alternative to the popular Si4410DY.

9.3 A, 30 V. R_DS(ON)= 0.013 W @ V_GS= 10 V

R_DS(ON)= 0.020 W @ V_GS= 4.5 V.

The SuperSOT^TM-8 package is 40% smaller than the SO-8

package.

High density cell design for extremely low R_DS(ON)

Proprietary SuperSOT^TM-8 small outline surface mount

package with high power and current handling capability.

The SuperSOT^TM-8 advanced package design and

optimized pinout allow the typical power dissipation to be

similar to the bigger SO-8 package.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SO-8

SOIC-16

SOT-223

SuperSOT^TM-8

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

FDR4410

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage

Draint Current - Continuous

- Pulsed

±20

9.3

(Note 1a)

Maximum Power Dissipation

(Note 1a)

1.8

P_D

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDR4410 Rev.C

12 3 4

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