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FDPF18N50T PDF预览

FDPF18N50T

更新时间： 2024-11-24 11:11:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 1658K
描述
功率 MOSFET，N 沟道，UniFETTM，500 V，18 A，265 mΩ，TO-220F

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中文翻译

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FDPF18N50T 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：0.97
雪崩能效等级（Eas）：945 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：18 A最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.265 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：38.5 W最大脉冲漏极电流 (IDM)：72 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDPF18N50T 数据手册

 浏览型号FDPF18N50T的Datasheet PDF文件第2页浏览型号FDPF18N50T的Datasheet PDF文件第3页浏览型号FDPF18N50T的Datasheet PDF文件第4页浏览型号FDPF18N50T的Datasheet PDF文件第5页浏览型号FDPF18N50T的Datasheet PDF文件第6页浏览型号FDPF18N50T的Datasheet PDF文件第7页 
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FDPF18N50T 替代型号

型号 品牌 替代类型 描述 数据表
FQPF18N50V2SDTU FAIRCHILD

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 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Me

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