Datasheet > FDP2572_12

FDP2572_12

更新时间： 2024-11-26 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	368K
描述
N-Channel PowerTrenchÂ® MOSFET 150V, 29A, 54mÎ©

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FDP2572_12 数据手册

January 2012

FDB2572

N-Channel PowerTrench^®MOSFET

150V, 29A, 54mΩ

Features

Applications

•

r_DS(ON)= 45mΩ (Typ.), V_GS= 10V, I_D= 9A

Q_g(tot) = 26nC (Typ.), V_GS= 10V

Low Miller Charge

•

DC/DC converters and Off-Line UPS

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82860

DRAIN

(FLANGE)

GATE

SOURCE

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

150

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 100^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

W/^oC

^oC

135

P_D

0.9

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case

1.11

^oC/W

, TO-263

Thermal Resistance Junction to Ambient , TO-263

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

(Note 2)

FDB2572 Rev. C

12 3 4 5 6 7...11

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