Datasheet > FDN86265P

FDN86265P

更新时间： 2024-09-30 11:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	297K
描述
P 沟道，PowerTrench® MOSFET，-150V，-0.8A，1.2Ω

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FDN86265P 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

-150 V, -0.8 A, 1.2 W

SOT−23/SUPERSOTt −23, 3 LEAD,

1.4x2.9

CASE 527AG

FDN86265P

General Description

This P−Channel MOSFET is produced using onsemi‘s advanced

POWERTRENCH process that has been optimized for the on−state

resistance and yet maintain superior switching performance.

Features

• Max r

= 1.2 W at V = –10 V, I = −0.8 A

GS D

= 1.4 W at V = –6 V, I = −0.7 A

GS D

DS(on)

Max r

DS(on)

• Very Low RDS−on Mid Voltage P−Channel Silicon Technology

Optimised for Low Qg

MARKING DIAGRAM

• This Product is Optimised for Fast Switching Applications as

Well as Load Switch Applications

• 100% UIL Tested

• Pb−Free, Halide Free and RoHS Compliant

265MG

265 = Specific Device Code

= Month Code

= Pb−Free Package

Applications

• Active Clamp Switch

• Load Switch

(Note: Microdot may be in either location)

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Value

–150

Unit

†

Device

Package

Shipping

FDN86265P

SOT−23

(Pb−Free/

Halide Free)

3000 /

Tape & Reel

Drain Current

– Continuous (Note 1a)

– Pulsed

–0.8

–5

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Single Pulse Avalanche Energy

(Note 3)

Power Dissipation

(Note 1a)

(Note 1b)

1.5

0.6

T , T

Operating and Storage Junction

Temperature Range

–55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Symbol

Parameter

Value

Unit

Thermal Resistance,

Junction to Case (Note 1)

°C/W

Thermal Resistance,

Junction to Ambient (Note 1a)

°C/W

Publication Order Number:

January, 2023 − Rev. 3

FDN86265P/D

12 3 4 5 6 7

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