Datasheet > FDN308P

FDN308P

更新时间： 2024-11-13 12:56:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	337K
描述
SuperSOT-3

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数据手册

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FDN308P 数据手册

SMD Type

Product specification

FDN308P

General Description

Features

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

• –20 V, –1.5 A. R_DS(ON)= 125 mΩ @ V_GS= –4.5 V

_DS(ON)= 190 mΩ @ V_GS= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Power management

• Load switch

• SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

• Battery protection

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

Gate-Source Voltage

±12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–1.5

–10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

250

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3000 units

308

FDN308P

7’’

8mm

http://www.twtysemi.com

1of 2

sales@twtysemi.com

4008-318-123

中文翻译

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