Datasheet > FDMS86581-F085

FDMS86581-F085

更新时间： 2024-11-14 11:10:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	419K
描述
60 V N 沟道 PowerTrench® MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FDMS86581-F085 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	6.17	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

FDMS86581-F085 数据手册

FDMS86581-F085

MOSFETꢀ– POWERTRENCH⁾,

N-Channel

60 V, 30 A, 15 mW

Features

www.onsemi.com

• Typical R

• Typical Q

= 12.5 mW at V = 10 V, I = 30 A

GS D

DS(on)

ELECTRICAL CONNECTION

= 13 nC at V = 10 V, I = 25 A

G(tot)

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

Applications

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Electronic Steering

• Integrated Started/Alternator

• Distributed Power Architectures and VRM

• Primary Switch for 12 V Systems

N-Channel MOSFET

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current − Continuous

Ratings

Unit

DSS

Power 56

(PQFN8 5x6)

CASE 483BJ

(VGS = 10) T = 25°C (Note 1)

MARKING DIAGRAM

See Figure 4

13.5

Pulsed Drain Current, T = 25°C

Single Pulse Avalanche Energy

(Note 2)

$Y&Z&3&K

FDMS

86581

Power Dissipation

W/°C

°C

0.33

Derate Above 25°C

T , T

−55 to +175

Operating and Storage Temperature

Thermal Resistance, Junction to Case

STG

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

°C/W

Maximum Thermal Resistance,

Junction to Ambient (Note 3)

FDMS86581

= Specific Device Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

2. Starting T = 25°C, L = 40mH, I = 26 A, V = 60 V during inductor charging

and V = 0V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design, while R

is determined by the board design. The maximum rating presented here is

based on mounting on a 1 in pad of 2 oz copper.

Publication Order Number:

May, 2019 − Rev. 3

FDMS86581−F085/D

12 3 4 5 6 7

中文翻译

下载PDF

与FDMS86581-F085相关器件

型号	品牌	获取价格	描述	数据表
FDMS8660AS	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1m
FDMS8660S	FAIRCHILD	获取价格	N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
FDMS8660S_08	FAIRCHILD	获取价格	N-Channel PowerTrench SyncFETTM
FDMS8662	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 30V, 49A, 2.0mヘ
FDMS8670	FAIRCHILD	获取价格	N-Channel Power Trench㈢ MOSFET 30V, 42A, 2.6m
FDMS8670AS	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET⑩
FDMS8670AS	TI	获取价格	Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck
FDMS8670AS_08	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3
FDMS8670S	FAIRCHILD	获取价格	N-Channel PowerTrench SyncFETTM
FDMS8670S	ONSEMI	获取价格	N 沟道，PowerTrench® SyncFET™ MOSFET，30V，42A，3.5

与FDMS86581-F085相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

9
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS86581-F085

FDMS86581-F085 技术参数

FDMS86581-F085 数据手册

与FDMS86581-F085相关器件

与FDMS86581-F085相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS86581-F085

FDMS86581-F085 技术参数

FDMS86581-F085 数据手册

与FDMS86581-F085相关器件

与FDMS86581-F085相关文章

您还可以找

您在本页遇到什么问题？