5秒后页面跳转
FDMS86550ET60 PDF预览

FDMS86550ET60

更新时间: 2024-11-14 11:15:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 449K
描述
N 沟道,PowerTrench® MOSFET,60V,245A,1.65mΩ

FDMS86550ET60 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-N5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:26 weeks风险等级:1.52
Is Samacsys:N雪崩能效等级(Eas):937 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):245 A
最大漏极电流 (ID):245 A最大漏源导通电阻:0.00165 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):187 W
最大脉冲漏极电流 (IDM):1068 A表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):87 ns最大开启时间(吨):112 ns
Base Number Matches:1

FDMS86550ET60 数据手册

 浏览型号FDMS86550ET60的Datasheet PDF文件第2页浏览型号FDMS86550ET60的Datasheet PDF文件第3页浏览型号FDMS86550ET60的Datasheet PDF文件第4页浏览型号FDMS86550ET60的Datasheet PDF文件第5页浏览型号FDMS86550ET60的Datasheet PDF文件第6页浏览型号FDMS86550ET60的Datasheet PDF文件第7页 
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

与FDMS86550ET60相关器件

型号 品牌 获取价格 描述 数据表
FDMS86568-F085 ONSEMI

获取价格

N 沟道,PowerTrench®,60V,80A,3.5mΩ
FDMS86569-F085 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,65A,5.6mΩ
FDMS86580-F085 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,50A,9.6mΩ
FDMS86581 ONSEMI

获取价格

Power MOSFET, 60V N Channel 30A, 15mΩ in Powe
FDMS86581-F085 ONSEMI

获取价格

60 V N 沟道 PowerTrench® MOSFET
FDMS8660AS FAIRCHILD

获取价格

N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1m
FDMS8660S FAIRCHILD

获取价格

N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
FDMS8660S_08 FAIRCHILD

获取价格

N-Channel PowerTrench SyncFETTM
FDMS8662 FAIRCHILD

获取价格

N-Channel PowerTrench㈢ MOSFET 30V, 49A, 2.0mヘ
FDMS8670 FAIRCHILD

获取价格

N-Channel Power Trench㈢ MOSFET 30V, 42A, 2.6m