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FDMS86182 PDF预览

FDMS86182

更新时间： 2024-11-14 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 405K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100V，78A，7.2mΩ

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中文翻译

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FDMS86182 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
Factory Lead Time：20 weeks风险等级：1.51
雪崩能效等级（Eas）：216 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：78 A最大漏极电流 (ID)：78 A
最大漏源导通电阻：0.0072 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：25 pFJEDEC-95代码：MO-240AA
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：83 W
最大脉冲漏极电流 (IDM)：364 A表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：43 ns最大开启时间（吨）：34 ns
Base Number Matches：1

FDMS86182 数据手册

 浏览型号FDMS86182的Datasheet PDF文件第2页浏览型号FDMS86182的Datasheet PDF文件第3页浏览型号FDMS86182的Datasheet PDF文件第4页浏览型号FDMS86182的Datasheet PDF文件第5页浏览型号FDMS86182的Datasheet PDF文件第6页浏览型号FDMS86182的Datasheet PDF文件第7页 
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与FDMS86182相关器件

型号 品牌 获取价格 描述 数据表
FDMS86183 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，51 A，12.8
FDMS86200 FAIRCHILD

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 		N-Channel Power Trench® MOSFET 150 V, 49 A,
FDMS86200 ONSEMI

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 		N 沟道，Power Trench® MOSFET，150V，35A，18mΩ
FDMS86200DC FAIRCHILD

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 		DUAL COOL™ PACKAGE POWERTRENCH® MOSFETs
FDMS86200DC ONSEMI

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 		N 沟道双 CoolTM 56 屏蔽门极 PowerTrench® MOSFET 150V
FDMS86201 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 120 V, 35 A, 1
FDMS86201 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 120V，49A，11.5mΩ
FDMS86202 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，64A，7.2mΩ
FDMS86202ET120 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，102A，7.2mΩ
FDMS8622 FAIRCHILD

获取价格

 		N-Channel Power Trench® MOSFET 100 V, 16.5 A

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