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FDMS3686S PDF预览

FDMS3686S

更新时间: 2024-01-03 02:31:49
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
15页 592K
描述
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET

FDMS3686S 数据手册

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January 2012  
FDMS3686S  
PowerTrench® Power Stage  
Asymmetric Dual N-Channel MOSFET  
Features  
General Description  
Q1: N-Channel  
This device includes two specialized N-Channel MOSFETs in a  
dual PQFN package. The switch node has been internally  
connected to enable easy placement and routing of synchronous  
buck converters. The control MOSFET (Q1) and synchronous  
SyncFET (Q2) have been designed to provide optimal power  
efficiency.  
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A  
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A  
Q2: N-Channel  
„ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A  
„ Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A  
Applications  
„ Low inductance packaging shortens rise/fall times, resulting in  
„ Computing  
lower switching losses  
„ MOSFET integration enables optimum layout for lower circuit  
inductance and reduced switch node ringing  
„ Communications  
„ General Purpose Point of Load  
„ Notebook VCORE  
„ RoHS Compliant  
G1  
D1  
D1  
D1  
D1  
PHASE  
(S1/D2)  
G2  
S2  
S2  
S2  
Bottom  
Top  
Power 56  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Q1  
30  
Q2  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
(Note 3)  
TC = 25 °C  
TC = 25 °C  
TA = 25 °C  
±20  
30  
±20  
55  
Drain Current  
-Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
54  
131a  
123  
231b  
100  
604  
2.51b  
1.01d  
ID  
A
-Pulsed  
40  
EAS  
Single Pulse Avalanche Energy  
404  
2.21a  
1.01c  
mJ  
W
Power Dissipation for Single Operation  
Power Dissipation for Single Operation  
Operating and Storage Junction Temperature Range  
TA = 25 °C  
TA = 25 °C  
PD  
TJ, TSTG  
-55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
RθJC  
Thermal Resistance, Junction to Ambient  
571a  
1251c  
3.5  
501b  
1201d  
2.0  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ”  
Tape Width  
Quantity  
22CA  
F10CC  
FDMS3686S  
Power 56  
12 mm  
3000 units  
1
©2012 Fairchild Semiconductor Corporation  
FDMS3686S Rev.C1  
www.fairchildsemi.com  

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