Datasheet > FDJ129P_07

FDJ129P_07

更新时间： 2024-11-26 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	3022K
描述
P-Channel -2.5 Vgs Specified PowerTrench MOSFET

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FDJ129P_07 数据手册

November 2007

FDJ129P



P-Channel -2.5 Vgs Specified PowerTrench MOSFET

General Description

Features

This P-Channel -2.5V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

• –4.2 A, –20 V.

R_DS(ON)= 70 mΩ @ V_GS= –4.5 V

R_DS(ON)= 120 mΩ @ V_GS= –2.5 V

• Low gate charge

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

•

Compact industry standard SC75-6 surface mount

package

RoHS Compliant

Bottom Drain

SC75-6 FLMP

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Ratings

–20

Units

Drain-Source Voltage

V_GSS

Gate-Source Voltage

± 12

–4.2

–16

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation for Single Operation

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDJ129P

7’’

8mm

3000 units

FDJ129P Rev G (W)

2007 Fairchild Semiconductor Corporation

12 3 4 5 6

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