Datasheet > FDG6301N (KDG6301N)

FDG6301N (KDG6301N)

更新时间： 2024-09-17 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1052K
描述
Dual N-Channel MOSFET

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数据手册

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FDG6301N (KDG6301N) 数据手册

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SMD Type

MOSFET

Dual N-Channel MOSFET

FDG6301N (KDG6301N)

■ Features

● VDS (V) = 25V

● ID = 220m A (VGS = 4.5V)

● R^DS(ON)＜ 4Ω (VGS = 4.5V)

● R^DS(ON)＜ 5Ω (VGS = 2.7V)

● Gate-Source Zener for ESD ruggedness

1 S1

2 G1

3 D2

4 S2

5 G2

6 D1

(>6kV Human Body Model).

1 or 4

2 or 5

3 or 6

6 or 3

5 or 2

4 or 1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

Gate-Source Voltage

±8

Continuous

Pulsed

220

650

Continuous Drain Current

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model(100 pF / 1500 W)

Power Dissipation

ESD

300

415

Thermal Resistance.Junction- to-Ambient

Junction Temperature

RthJA

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

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