Datasheet > FDG2WK806M++4MD5

FDG2WK806M++4MD5

更新时间： 2024-11-19 17:13:11

品牌	Logo	应用领域
艾华 - AISHI		/
页数	文件大小	规格书
15页	411K
描述
Film DC-Link

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDG2WK806M++4MD5 数据手册

Metallized Polypropylene Film DC-Link Capacitors

FDG Series - 450 ~ 1200VDC, THB Grade IIIB

Overview

Applications

The FDG capacitor is constructed of metallized

polypropylene film encapsulated with epoxy resin in

a plastic box, with 2 or 4 tinned copper wire. These

FDG series is suitable for harsh environment

conditions and compliant to THB Grade IIIB.

Widely used in high performance DC

Link, DC filtering, frequency converters,

industrial power supply, solar inverter

and energy storage. Not suitable for

across the line application.

Features

⚫

Self-healing

High capacitance density

Operating temperature range: - 40°C to 105°C

High ripple current and low loss

High contact reliability

Suitable for high frequency applications

Suitable for harsh environmental conditions

THB Grade IIIB (85°C, 85% RH, 1000h at U_NDC

)

Approvals

Marking

Specification

File Number

UL 810

E500537

Marking

Series

Logo

Capacitance

Date Code

FDG 65uF

Rated Voltage

700V

Tolerance

Manufacturing Date Code

Year

2018

2019

2020

2021

2022

2023

Code

Month

Jan

Feb

Mar

Apr

Code

Year

2024

2025

2026

2027

2028

2029

Code

Month

Jul

Aug

Sep

Oct

Code

May

Jun

Nov

Dec

Page 1

FDG-21V1

website: www.aishi.com

12 3 4 5 6 7...15

中文翻译

下载PDF

与FDG2WK806M++4MD5相关器件

型号	品牌	获取价格	描述	数据表
FDG311N	FAIRCHILD	获取价格	N-Channel 2.5V Specified PowerTrench MOSFET
FDG311N	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，1.9 A，115mΩ
FDG311N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDG311ND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDG312P	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDG312P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-1.2 A，180 m
FDG312P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDG313N	FAIRCHILD	获取价格	Digital FET, N-Channel
FDG313N	ONSEMI	获取价格	N 沟道，数字 FET，25V，0.95A，0.45Ω
FDG313N_NL	FAIRCHILD	获取价格	暂无描述