型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDG2WK806M++4MD5 | AISHI |
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Film DC-Link | |
FDG311N | FAIRCHILD |
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N-Channel 2.5V Specified PowerTrench MOSFET | |
FDG311N | ONSEMI |
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P 沟道,PowerTrench® MOSFET,2.5V 指定,1.9 A,115mΩ | |
FDG311N_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
FDG311ND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
FDG312P | FAIRCHILD |
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P-Channel 2.5V Specified PowerTrench⑩ MOSFET | |
FDG312P | ONSEMI |
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P 沟道,PowerTrench® MOSFET,2.5V 指定,-1.2 A,180 m | |
FDG312P_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDG313N | FAIRCHILD |
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Digital FET, N-Channel | |
FDG313N | ONSEMI |
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N 沟道,数字 FET,25V,0.95A,0.45Ω |