Discr ete P OWER & Sign a l
Tech n ologies
FDH/FDLL 300/A / 333
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL300
BROWN
FDLL300A BROWN
GREEN
YELLOW
FDLL333 BROWN
BLUE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
Average Rectified Current
DC Forward Current
125
200
500
600
V
IO
mA
mA
mA
IF
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
if(surge)
1.0
4.0
A
A
Pulse width = 1.0 microsecond
Storage Temperature Range
-65 to +200
C
°
Tstg
TJ
Operating Junction Temperature
175
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FDH/FDLL 300/A / 333
PD
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
500
3.33
300
mW
mW/ C
°
°
Rθ
C/W
°
JA
ã 1997 Fairchild Semiconductor Corporation