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FDD8453LZ PDF预览

FDD8453LZ

更新时间： 2024-11-10 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
9页 491K
描述
N 沟道，Power Trench® MOSFET，40V，50A，6.7mΩ

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中文翻译

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FDD8453LZ 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.95雪崩能效等级（Eas）：253 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：50 A最大漏源导通电阻：0.0106 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：65 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD8453LZ 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
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FDD8453LZ-F085 ONSEMI

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FDD850N10LD FAIRCHILD

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 		Power Field-Effect Transistor, 15.3A I(D), 100V, 0.096ohm, 1-Element, N-Channel, Silicon,
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FDD8580 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM
FDD8586 ROCHESTER

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 		35A, 20V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3

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