Datasheet > FDD24AN06LA0

FDD24AN06LA0

更新时间： 2024-11-21 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	581K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:40A;Vgs(th)(V):±20;漏源导通电阻:19mΩ@10V

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FDD24AN06LA0 数据手册

UMW

FDD24AN06LA0

60V N-Channel MOSFET

Features

●

V_DS(V) = 60V

I_D=36A (V_GS= 10V)

●

R_DS(ON)<19mΩ (V _GS= 10V)

● R_DS(ON)<24mΩ (V _GS= 5V)

• Low Miller Charge

●

• Low Q_RRBody Diode

●

Applications

●

•

Motor / Body Load Control

ABS Systems

•

●

Powertrain Management

•

Injection Systems

●

•

●

•

●

•

●

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 25^oC, V_GS= 5V)

Continuous (T_C= 100^oC, V_GS= 5V)

Continuous (T_A= 25^oC, V_GS= 5V, R_θJA= 52^oC/W)

Pulsed

I_D

7.1

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

P_D

0.5

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-252

2.0

100

^oC/W

Thermal Resistance Junction to Ambient TO-252

Thermal Resistance Junction to Ambient TO-252, 1in²copper pad area

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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