Datasheet > FDD1600N10ALZ

FDD1600N10ALZ

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	619K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:3.4A;Vgs(th)(V):±20;漏源导通电阻:160mΩ@10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDD1600N10ALZ 数据手册

1600N10

100 V N-ChannelMOSFET

UMW

Description

ductor’s

This N-Channel MOSFET is produced using

advanced

minimize the

process that has been tai-lored to

on-state resistance and maintain superior switching

performance.

Features

100V

• V_DS

• R_DS(ON)(at V_GS=10V) < 124mΩ

(at V_GS= 5V) < 175mΩ

• R_DS(ON)

• Low Gate Charge (Typ.2.78 nC)

• Fast Switching

• Improved dv/dt Capability

• RoHS Compliant

Application

• Consumer Appliances

• LED TV and Monitor

• Synchronous Rectification

• Uninterruptible Power Supply

• Micro Solar Inverter

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted.

Symbol

V_DSS

V_GSS

Parameter

FDD1600N10ALZ

Unit

Drain to Source Voltage

Gate to Source Voltage

100

±20

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

6.8

I_D

Drain Current

4.3

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 3)

13.6

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

5.08

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

14.9

P_D

Power Dissipation

- Derate Above 25^oC

0.12

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

-55 to +150

300

^oC

Thermal Characteristics

Symbol

Parameter

Unit

FDD1600N10ALZ

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

8.4

^oC/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与FDD1600N10ALZ相关器件

型号	品牌	获取价格	描述	数据表
FDD1600N10ALZD	ONSEMI	获取价格	BoostPak（N 沟道 PowerTrench® MOSFET + 二极管）100 V
FDD16AN08A0	FAIRCHILD	获取价格	N-Channel UltraFET Trench MOSFET 75V, 50A, 16
FDD16AN08A0	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，75 V，50 A，16 mΩ
FDD16AN08A0_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Meta
FDD16AN08A0_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Meta
FDD16AN08A0-F085	ONSEMI	获取价格	N 沟道，UltraFET® Trench MOSFET，75V，50A，13mΩ
FDD18N20LZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，UniFETTM，200 V，16 A，125 m
FDD20AN06A0	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDD20AN06A0_10	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60V, 45A, 20mW
FDD20AN06A0-F085	ONSEMI	获取价格	60 V、45 A、17 mΩ、DPAKN 沟道 PowerTrench®