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FDD068AN03L PDF预览

FDD068AN03L

更新时间: 2024-05-23 22:23:48
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 519K
描述
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):35A;Vgs(th)(V):±20;漏源导通电阻:5.7mΩ@10V;漏源导通电阻:6.8mΩ@4.5V

FDD068AN03L 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:unknown
风险等级:5.44雪崩能效等级(Eas):168 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):17 A
最大漏源导通电阻:0.0068 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

FDD068AN03L 数据手册

 浏览型号FDD068AN03L的Datasheet PDF文件第2页浏览型号FDD068AN03L的Datasheet PDF文件第3页浏览型号FDD068AN03L的Datasheet PDF文件第4页浏览型号FDD068AN03L的Datasheet PDF文件第5页浏览型号FDD068AN03L的Datasheet PDF文件第6页 
R
UMW  
068AN03  
30V N-Channel MOSFET  
Features  
VDS(V) = 30V  
ID =35A (VGS= 10V)  
RDS(ON) <5.7m(V GS = 10V)  
RDS(ON) <6.8m(V GS = 4.5V)  
Low Miller Charge  
Low Q Body Diode  
RR  
UIS Capability (Single Pulse and Repetitive Pulse)  
Applications  
D
12V Automotive Load Control  
Starter / Alternator Systems  
G
Electronic Power Steering Systems  
ABS  
S
DC-DC Converters  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
V
V
DSS  
GS  
20  
Drain Current  
o
35  
35  
A
A
Continuous (T < 154 C, V = 10V)  
C
GS  
o
I
Continuous (T < 150 C, V = 4.5V)  
C GS  
D
o
o
Continuous (T  
= 25 C, V = 10V, with R = 52 C/W)  
θJA  
17  
A
amb  
GS  
Pulsed  
Figure 4  
168  
A
E
P
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
mJ  
W
AS  
80  
D
o
o
Derate above 25 C  
0.53  
W/ C  
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
R
R
R
Thermal Resistance Junction to Case TO-252,  
1.88  
100  
52  
C/W  
θJC  
θJA  
θJA  
o
Thermal Resistance Junction to Ambient TO-252  
C/W  
2
o
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area  
C/W  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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