Datasheet > FDD044AN03L

FDD044AN03L

更新时间： 2024-09-28 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	527K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:35A;Vgs(th)(V):±20;漏源导通电阻:3.9mΩ@10V;漏源导通电阻:4.4mΩ@4.5V

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FDD044AN03L 数据手册

044AN03

UMW

30V N-Channel MOSFET

Features

•

V_DS(V) = 30V

I_D= 35A (V_GS= 10V)

R_DS(ON)<3.9mΩ (V _GS= 10V)

R_DS(ON)<4.4mΩ (V _GS= 4.5V)

•

Low Miller Charge

•

Low Q Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Applications

•

12V Automotive Load Control

Starter / Alternator Systems

•

Electronic Power Steering Systems

•

ABS

DC-DC Converters

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

Drain Current

Continuous (T < 168 C, V = 10V)

Continuous (T < 167 C, V = 4.5V)

C GS

Continuous (T

= 25 C, V = 10V, with R = 52 C/W)

θJA

amb

Pulsed

Figure 4

690

Single Pulse Avalanche Energy (Note 1)

Power dissipation

160

Derate above 25 C

1.07

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252

0.94

100

C/W

θJC

θJA

C/W

Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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