Datasheet > FDCY18S120

FDCY18S120

更新时间： 2024-09-24 15:18:55

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	521K
描述
Single TO-247

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中文翻译

获取价格

数据手册

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FDCY18S120 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI Diode

FDCY18S120

SiC Schottky Barrier Diode

Connection diagram

Features

Outline Drawings [mm]

• Ultra Low IR

• Low V

• Tj MAX = 175˚C

• High reliability at higher temperatures

Applications

• High frequency operation

• DC-DC converters

• AC adapter

Sn-Cu (Pb＜1000ppm)

Maximum Ratings and Characteristics

Maximum ratings (at Ta=25˚C Unless otherwise speciﬁed)

Item

Repetitive peak reverse voltage

Symbols

Conditions

Ratings

1200

Units

VRRM

Continuous forward current

Non-repetitive forward surge current

Operating junction temperature

Storage temperature

D=1, Tc<117°C

FSM

Sine wave, 10ms 1shot

175

˚C

Tstg

-55 to +150

Electrical characteristics (at Ta=25˚C Unless otherwise speciﬁed)

Item

Symbols

Conditions

Min.

1.10

Max.

Units

Forward voltage

Reverse current

= 18A

1.80

=VRRM

µA

Total Capacitive Charge

Switching time

=160V, I

di/dt=100A/μs, T

=18A,

=25°C

=0V, T

=400V, T

=1200V, T

=25°C, f=1MHz

1330

100

1490

115

Total Capacitance

Thermal resistance

Rth(j-c)

Junction to case

1.3

˚C/W

Mechanical characteristics

Item

Conditions

Ratings

Units

Mounting torque

Approximate mass

Recommended torque

0.4 to 0.6

2.0

N•m

4275

OCTOBER 2015

12 3 4

中文翻译

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