Datasheet > FDCP10S65

FDCP10S65

更新时间： 2024-04-09 18:59:05

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	251K
描述
Single TO-220

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数据手册

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FDCP10S65 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI Diode

FDCP10S65

SiC Schottky Barrier Diode

Connection diagram

Features

Outline Drawings [mm]

• Ultra Low IR

• Low V

• Tj MAX = 175˚C

• High reliability at higher temperatures

Applications

Sn-Cu (Pb＜1000ppm)

• High frequency operation

• DC-DC converters

• AC adapter

Maximum Ratings and Characteristics

Maximum ratings (at Ta=25˚C Unless otherwise speciﬁed)

Item

Repetitive peak reverse voltage

Symbols

Conditions

Ratings

650

Units

RRM

Continuous forward current

Non-repetitive forward surge current

Operating junction temperature

Storage temperature

D=1, T

<131˚C

FSM

Sine wave, 10ms 1shot

175

˚C

Tstg

-55 to +150

Electrical characteristics (at Ta=25˚C Unless otherwise speciﬁed)

Item

Symbols

Conditions

Min.

1.10

Max.

Units

Forward voltage

Reverse current

= 10A

1.80

=VRRM

μA

Total Capacitive Charge

Switching time

=170V, I

di/dt=100A/μs, T

=10A,

=25˚C

=0V, T

=200V, T

=650V, T

=25˚C, f=1MHz

470

560

Total Capacitance

Thermal resistance

=25˚C, f=1MHz

th(j-c)

Junction to case

2.0

˚C/W

Mechanical characteristics

Item

Conditions

Ratings

Units

Mounting torque

Approximate mass

Recommended torque

0.3 to 0.5

2.0

N•m

4278

OCTOBER 2015

12 3 4

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