Datasheet > FDC2512 (KDC2512)

FDC2512 (KDC2512)

更新时间： 2024-11-18 18:09:51

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科信 - KEXIN		/
页数	文件大小	规格书
4页	214K
描述
N-Channel MOSFET

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数据手册

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FDC2512 (KDC2512) 数据手册

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SMD Type

MOSFET

N-Channel Enhancement MOSFET

FDC2512 ^(KDC2512)

(

)

8QLWꢆ PP

SOT-23-6

+0.1

-0.1

0.4

Ƶ Features

ƽ VDS (V) = 150V

ƽ ID = 1.4A (VGS = 10V)

ƽ RDS(ON) ˘ 425m¡ (VGS = 10V)

ƽ RDS(ON) ˘ 475m¡ (VGS = 6V)

ꢀꢁꢂꢁꢃ

ꢄꢁꢂꢁꢃ

ꢁꢂꢅꢈ

+0.01

-0.01

+0.2

-0.1

ꢃ

ꢀ

ꢁ

ꢂ

ꢄ

ꢅ

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Symbol

Rating

150

f20

1.4

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

*1a

Power Dissipation

*1a

*1b

1.6

0.8

Thermal Resistance.Junction- to-Ambient *1a

thJA

thJC

ć/W

Thermal Resistance.Junction- to-Case

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

*1.

șJA

reference is defined as the so

lder mounting surface of the drain pins. R

_{ș JC}is guaranteed by design

_șCAis determined by the user's board design.

while R

78°C/W when mounted on a 1in2 pad of 2 oz copper

*1a.

*1b.

156°C/W when mounted on a minimum pad of 2 oz copper

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