Datasheet > FDBL0150N60

FDBL0150N60

更新时间： 2023-09-03 20:38:44

品牌	Logo	应用领域
安森美 - ONSEMI		开关晶体管
页数	文件大小	规格书
9页	594K
描述
N 沟道，PowerTrench® MOSFET，60V，240A，1.5mΩ

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FDBL0150N60 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-F8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	26 weeks	风险等级：	5.71
雪崩能效等级（Eas）：	614 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	240 A	最大漏源导通电阻：	0.0015 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	MO-299A
JESD-30 代码：	R-PSSO-F8	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	245
极性/信道类型：	N-CHANNEL	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDBL0150N60 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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与FDBL0150N60相关器件

型号	品牌	获取价格	描述	数据表
FDBL0150N80	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，300A，1.4mΩ
FDBL0200N100	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，300A，2.0mΩ
FDBL0210N80	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET，80V，240A，2.0mΩ
FDBL0240N100	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET，100V，210A，2.8mΩ
FDBL0260N100	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，200A，2.6mΩ
FDBL0330N80	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，220A，3.0mΩ
FDBL0630N150	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，150V，169A，6.3mΩ
FDBL86062-F085	ONSEMI	获取价格	N沟道，PowerTrench®MOSFET，100V，300A，2.0mΩ
FDBL86063	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 240A, 2.
FDBL86063-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，240A，2.6mΩ

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