Datasheet > FDB2572

FDB2572

更新时间： 2024-11-15 12:04:19

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲 PC
页数	文件大小	规格书
2页	175K
描述
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A UIS Capability (Single Pulse and Repetitive Pulse)

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数据手册

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FDB2572 数据手册

SMD Type

Product specification

KDB2572^(FDB2572)

Features

TO-263

Unit: mm

rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A

Q^g(tot)= 26nC (Typ.), V^GS= 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low Q^RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current-Continuous T^C=25

T^A=25

Symbol

VDSS

Rating

Unit

150

V^GSS

I^D

Power dissipation

135

P^D

0.9

Derate above 25

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

R^èJA

R^èJC

T^ch

1.11

175

Storage temperature

T^stg

-55 to +175

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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