Datasheet > FCQ10A03L

FCQ10A03L

更新时间： 2024-01-31 21:23:59

品牌	Logo	应用领域
NIEC		二极管
页数	文件大小	规格书
6页	46K
描述
SBD DUAL DIODES - CATHODE COMMON

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中文翻译

获取价格

数据手册

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FCQ10A03L 数据手册

SBD T y p e : FCQ10A03L

FEATURES

OUTLINE DRAWING

*Similar to TO-220AB Case

*Fully Molded Isolation

*Dual Diodes – Cathode Common

*Extremely Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

*Wire-Bonded technology

Maximum Ratings

Approx Net Weight: 1.75g

FCQ10A03L

Rating

Symbol

Unit

Repetitive Peak Reverse Voltage

Repetitive Peak Surge Reverse Voltage

V_RRM

V_RRSM

35(pulse width ≤ 1µs duty ≤ 1/50)

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

Tc=116°C

I_F(RMS)

I_FSM

11.1

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

120

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

Tj= 25°C, I_FM= 5 A

per arm

I_RM

Peak Forward Voltage

Thermal Resistance

V_FM

0.47

Rth(j-c) Junction to Case

Rth(c-f) Cace to Fin

°C /W

1.5 °C /W

12 3 4 5 6

中文翻译

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