Datasheet > FCQ08A06

FCQ08A06

更新时间： 2024-09-17 23:14:03

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	59K
描述
Schottky Barrier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FCQ08A06 数据手册

SBD T y p e : FCQ08A06

FEATURES

OUTLINE DRAWING

*Similar to TO-220AB Case

*Fully Molded Isolation

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

*Wire-Bonded technology

Maximum Ratings

Approx Net Weight: 1.75g

FCQ08A06

Rating

Symbol

Unit

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

V_RRM

V_RSM

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

Tc=117°C

I_F(RMS)

I_FSM

8.89

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

I_RM

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

Tj= 25°C, I_FM= 4 A

per arm

Peak Forward Voltage

Thermal Resistance

V_FM

0.65

Rth(j-c) Junction to Case

Rth(c-f) Cace to Fin

°C /W

1.5 °C /W

12 3 4 5 6

中文翻译

下载PDF

与FCQ08A06相关器件

型号	品牌	获取价格	描述	数据表
FCQ08U06	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 60V V(RRM), Silicon,
FCQ10A03L	NIEC	获取价格	SBD DUAL DIODES - CATHODE COMMON
FCQ10A03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
FCQ10A04	NIEC	获取价格	Schottky Barrier Diode
FCQ10A06	NIEC	获取价格	Schottky Barrier Diode
FCQ10U06	ETC	获取价格	FCQ10U06
FCQ20A03L	NIEC	获取价格	SBD DUAL DIODES - CATHODE COMMON
FCQ20A03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
FCQ20A04	NIEC	获取价格	Schottky Barrier Diode
FCQ20A06	ETC	获取价格	SBD