Datasheet > FCP190N65S3

FCP190N65S3

更新时间： 2024-11-27 11:10:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	377K
描述
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，17 A，190 mΩ，TO-220

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FCP190N65S3 数据手册

FCP190N65S3

MOSFET – Power, N-Channel,

SUPERFET III, Easy Drive

650 V, 17 A, 190 mW

www.onsemi.com

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provides superior switching performance, and

withstand extreme dv/dt rate.

MAX

I MAX

DSS

DS(ON)

650 V

190 mW @ 10 V

17 A

Consequently, SUPERFET III MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

Features

• 700 V @ T = 150°C

• Typ. R

= 159 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 33 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 300 pF)

oss(eff.)

POWER MOSFET

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

TO−220

CASE 340AT

• Lighting / Charger / Adapter

MARKING DIAGRAM

$Y&Z&3&K

FCP

190N65S3

= ON Semiconductor Logo

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

FCP190N65S3

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

August, 2019 − Rev. 4

FCP190N65S3/D

12 3 4 5 6 7...10

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