Datasheet > FCP16N60N-F102

FCP16N60N-F102

更新时间： 2024-11-27 11:12:19

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	553K
描述
功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，16 A，199 mΩ，TO-220

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FCP16N60N-F102 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.71
雪崩能效等级（Eas）：	355 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	16 A	最大漏源导通电阻：	0.199 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	10 pF
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	134.4 W
最大脉冲漏极电流 (IDM)：	48 A	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	181 ns	最大开启时间（吨）：	82.6 ns
Base Number Matches：	1

FCP16N60N-F102 数据手册

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与FCP16N60N-F102相关器件

型号	品牌	获取价格	描述	数据表
FCP16SG	ADAM-TECH	获取价格	.100 IDC BOX HEADER .100" X .100" [2.54 X 2.54] CENTERLINE
FCP170N60	ONSEMI	获取价格	N 沟道 SuperFET® MOSFET 600 V，22 A，170 mΩ
FCP-18	YAMAICHI	获取价格	DIP Connector, 18 Contact(s), 2 Row(s), Male, IDC Terminal, Plug
FCP190N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FCP190N60	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，20.2 A
FCP190N60_13	FAIRCHILD	获取价格	N-Channel SuperFET II MOSFET
FCP190N60E	FAIRCHILD	获取价格	600V N-Channel MOSFET
FCP190N60E	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，
FCP190N60-GF102	ONSEMI	获取价格	N 沟道 SuperFET® II MOSFET 600V, 20.2A, 199mΩ
FCP190N65F	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650V，20.6A

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