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FCP16N60N PDF预览

FCP16N60N

更新时间： 2024-11-24 11:12:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 553K
描述
功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，16 A，199 mΩ，TO-220

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中文翻译

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FCP16N60N 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.91雪崩能效等级（Eas）：355 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：16 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.199 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：10 pFJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：134.4 W最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：181 ns
最大开启时间（吨）：82.6 nsBase Number Matches：1

FCP16N60N 数据手册

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