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FCP16N60 PDF预览

FCP16N60

更新时间： 2024-11-24 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 672K
描述
N 沟道 SuperFET® MOSFET 600 V, 16 A, 260 mΩ

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中文翻译

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FCP16N60 技术参数

是否无铅： 不含铅生命周期：Not Recommended
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：7.17
雪崩能效等级（Eas）：450 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.26 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：48 A认证状态：Not Qualified
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FCP16N60 数据手册

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