Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
Description
.110
.060
3
.016
1
.037
.115
1
3
.037
2
Pin 2
Pin 1
Pin 3
2
.043
.016
.004
Features
n INDUSTRY STANDARD SOT-23
PACKAGE
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
n MEETS UL SPECIFICATION 94V-0
BAV70
Units
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
BAV70
85
75
Volts
Volts
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
mAmps
............................................. 625 ...............................................
............................................. 4.0 ............................................... Amps
.........................................
200
..........................................
mW
°C
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
°C
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 50 mA
............................................. 1.0 ...............................................
Volts
Maximum DC Reverse Current...IR @ VR = 70V
Maximum Diode Capacitance...CD
............................................. 2.5 ...............................................
............................................. 1.5 ...............................................
............................................. 4.0 ...............................................
µAmps
pF
Maximum Reverse Recovery Time...tRR
ns
.01 uF
Device Under Test
Output
Trr
0.1 IR
PVV = 100ns
IF
5K Ohms
IR
50 Ohms
RG = 50 Ohms
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