是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | 1411 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8504.50.80.00 |
风险等级: | 5.7 | Is Samacsys: | N |
大小写代码: | 1411 | 型芯材料: | FERRITE |
直流电阻: | 0.07 Ω | 标称电感 (L): | 0.47 µH |
电感器应用: | HIGH CURRENT INDUCTOR | 电感器类型: | GENERAL PURPOSE INDUCTOR |
功能数量: | 1 | 端子数量: | 2 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
最小质量因数(标称电感时): | 40 | 最大额定电流: | 1.8 A |
自谐振频率: | 450 MHz | 形状/尺寸说明: | RECTANGULAR PACKAGE |
屏蔽: | NO | 特殊特征: | DCR IS MEASURED AT 30% TOLERANCE |
表面贴装: | YES | 端子位置: | DUAL ENDED |
端子形状: | WRAPAROUND | 测试频率: | 2.52 MHz |
容差: | 10% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCHD040N65S3-F155 | ONSEMI |
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功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHD125N65S3R0-F155 | ONSEMI |
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功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHD190N65S3R0-F155 | ONSEMI |
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功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHP | VISHAY |
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High Frequency 60 GHz High Power 1 W Thin Film Surface Mount Chip Resistor | |
FCHS08A045 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 45V V(RRM), Silicon, PLASTIC, SIMILAR T | |
FCHS08A08 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 80V V(RRM), Silicon, PLASTIC, SIMILAR T | |
FCHS08A12 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 120V V(RRM), Silicon, PLASTIC, SIMILAR | |
FCHS08A12 | KYOCERA AVX |
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Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b | |
FCHS10A045 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, PLASTIC, SIMILAR | |
FCHS10A045 | KYOCERA AVX |
获取价格 |
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b |