是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | 1411 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8504.50.80.00 |
风险等级: | 5.7 | 大小写代码: | 1411 |
型芯材料: | FERRITE | 直流电阻: | 0.27 Ω |
标称电感 (L): | 6.8 µH | 电感器应用: | HIGH CURRENT INDUCTOR |
电感器类型: | GENERAL PURPOSE INDUCTOR | 功能数量: | 1 |
端子数量: | 2 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 最小质量因数(标称电感时): | 20 |
最大额定电流: | 0.6 A | 自谐振频率: | 33 MHz |
形状/尺寸说明: | RECTANGULAR PACKAGE | 屏蔽: | NO |
特殊特征: | DCR IS MEASURED AT 30% TOLERANCE | 表面贴装: | YES |
端子位置: | DUAL ENDED | 端子形状: | WRAPAROUND |
测试频率: | 7.96 MHz | 容差: | 10% |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCHC20-820K-RC | ALLIED |
获取价格 |
Ferrite Core Chip Inductors High Current | |
FCHC20-8R2K-RC | ALLIED |
获取价格 |
Ferrite Core Chip Inductors High Current | |
FCHC20-R47K-RC | ALLIED |
获取价格 |
Ferrite Core Chip Inductors High Current | |
FCHD040N65S3-F155 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHD125N65S3R0-F155 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHD190N65S3R0-F155 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V | |
FCHP | VISHAY |
获取价格 |
High Frequency 60 GHz High Power 1 W Thin Film Surface Mount Chip Resistor | |
FCHS08A045 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 45V V(RRM), Silicon, PLASTIC, SIMILAR T | |
FCHS08A08 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 80V V(RRM), Silicon, PLASTIC, SIMILAR T | |
FCHS08A12 | NIEC |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 120V V(RRM), Silicon, PLASTIC, SIMILAR |