FCH10A20

更新时间： 2024-09-22 23:13:15

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管局域网
页数	文件大小	规格书
6页	79K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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FCH10A20 数据手册

10A 200V Cathode Common

SBD Type : FCH10A20

OUTLINE DRAWING

For High Frequency Rectification

FEATURES

* High VRM SBD

* Low Forward Voltage Drop and Low Noise

* Fully Molded Isolation

* Dual Diodes Cathode Common

Maximum Ratings

Approx Net Weight:1.75g

FCH10A20

Symbol

Rating

Unit

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

V_RRM

I_O

I_F(RMS)

I_FSM

200

50 Hz,Full Sine Wave

Resistive Load

11.1

Tc=118°C

50 Hz Full Sine Wave,1cycle

Non-repetitive

Surge Forward Current

100

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Tjw

Tstg

- 40 to + 150

0.5 Recommended value

°C

N•m

Electrical • Thermal Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj=25°C,V_RM=V_RRMper Diode

Tj=25°C, I_FM=5A per Diode

200

0.90

µA

Rth(j-c) Junction to Case

Rth(c-f) Case to Fin

Thermal Resistance

°C/W

1.5

12 3 4 5 6

中文翻译

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