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FCA76N60N PDF预览

FCA76N60N

更新时间: 2024-11-05 12:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 720K
描述
FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ

FCA76N60N 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:4.49
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:166913Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:to-3+Samacsys Released Date:2020-01-26 18:45:50
Is Samacsys:N雪崩能效等级(Eas):8022 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):76 A
最大漏极电流 (ID):76 A最大漏源导通电阻:0.036 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):543 W最大脉冲漏极电流 (IDM):228 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FCA76N60N 数据手册

 浏览型号FCA76N60N的Datasheet PDF文件第2页浏览型号FCA76N60N的Datasheet PDF文件第3页浏览型号FCA76N60N的Datasheet PDF文件第4页浏览型号FCA76N60N的Datasheet PDF文件第5页浏览型号FCA76N60N的Datasheet PDF文件第6页浏览型号FCA76N60N的Datasheet PDF文件第7页 
May 2010  
SupreMOSTM  
FCA76N60N  
N-Channel MOSFET  
600V, 76A, 36mΩ  
Features  
Description  
RDS(on) = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A  
Ultra Low Gate Charge ( Typ. Qg = 218nC)  
Low Effective Output Capacitance  
100% Avalanche Tested  
The SupreMOS MOSFET, Fairchild’s next generation of high  
voltage super-junction MOSFETs, employs a deep trench filling  
process that differentiates it from preceding multi-epi based  
technologies. By utilizing this advanced technology and precise  
process control, SupreMOS provides world class Rsp, superior  
switching performance and ruggedness.  
RoHS Compliant  
This SupreMOS MOSFET fits the industry’s AC-DC SMPS  
requirements for PFC, server/telecom power, FPD TV power,  
ATX power, and industrial power applications.  
D
D
G
TO-3PN  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
600  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
-Pulsed  
76  
ID  
Drain Current  
A
48.1  
IDM  
EAS  
IAR  
Drain Current  
(Note 1)  
(Note 2)  
228  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
8022  
25.3  
mJ  
A
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt Ruggedness  
Peak Diode Recovery dv/dt  
5.43  
mJ  
(Note 3)  
100  
dv/dt  
PD  
V/ns  
20  
(TC = 25oC)  
-Derate above 25oC  
543  
W
W/oC  
oC  
Power Dissipation  
4.34  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Ratings  
0.23  
Units  
RθJC  
RθJS  
RθJA  
Thermal Resistance, Case to Heat Sink (Typical)  
Thermal Resistance, Junction to Ambient  
0.24  
oC/W  
40  
©2010 Fairchild Semiconductor Corporation  
FCA76N60N Rev. A  
1
www.fairchildsemi.com  

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