5秒后页面跳转
FC142 PDF预览

FC142

更新时间: 2024-09-23 22:40:51
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管光电二极管
页数 文件大小 规格书
2页 48K
描述
PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

FC142 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 2.13最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

FC142 数据手册

 浏览型号FC142的Datasheet PDF文件第2页 
Ordering number:EN3477  
FC142  
PNP Epitaxial Planar Silicon Composite Transistor  
Switching Applications  
(with Bias Resistance)  
Features  
Package Dimensions  
unit:mm  
· On-chip bias resistance (R1=4.7kΩ, R2=10k).  
· Composite type with 2 transistors contained in the  
CP package currently in use, improving the mount-  
ing efficiency greatly.  
2066  
[FC142]  
· The FC142 is formed with two chips, being equiva-  
lent to the 2SA1653, placed in one package.  
· Excellent in thermal equilibrium and pair capability.  
Electrical Connection  
C1:Collector 1  
C2:Collector 2  
B2:Base 2  
EC:Emitter Common  
B1:Base 1  
SANYO:CP5  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
–50  
–50  
–6  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
–100  
–200  
200  
300  
150  
mA  
mA  
mW  
mW  
˚C  
C
Peak Collector Current  
Collector Dissipation  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
P
T
Tj  
1 unit  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditons  
Unit  
min  
typ  
max  
–0.1  
Collector Cutoff Current  
I
I
V
V
V
V
V
V
I
=–40V, I =0  
µA  
µA  
µA  
CBO  
CEO  
CB  
CB  
EB  
CE  
CE  
CB  
E
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
=–40V, I =0  
E
=–5V, I =0  
C
–0.5  
I
–262  
50  
–340  
–485  
EBO  
h
=–5V, I =–10mA  
C
FE  
Gain-Bandwidth Product  
Output Capacitance  
C-E Saturation Voltage  
C-B Breakdown Voltage  
C-E Breakdown Voltage  
Input OFF-State Voltage  
Input ON-State Voltage  
Input Resistance  
f
=–5V, I =5mA  
C
=–10V, f=1MHz  
200  
5.1  
MHz  
pF  
V
T
Cob  
V
=–10mA, I =–0.5mA  
B
–0.1  
–0.3  
CE(sat)  
C
V
V
I
I
=–10µA, I =0  
E
–50  
–50  
V
(BR)CBO  
C
C
=–100µA, R =∞  
V
(BR)CEO  
BE  
V
V
=–5V, I =–100µA  
–0.7  
–0.95  
3.3  
–0.85  
–1.3  
4.7  
–0.95  
–2.0  
6.1  
V
I(off)  
CE  
CE  
C
V
V
=–0.2V, I =–10mA  
C
V
I(on)  
R1  
kΩ  
Resistance Ratio  
R1/R2  
0.47  
Note:The specifications shown above are for each individual transistor.  
Marking:142  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/7190MO, TA (KOTO) No.3477-1/2  

与FC142相关器件

型号 品牌 获取价格 描述 数据表
FC143 SANYO

获取价格

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resist
FC144 SANYO

获取价格

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resist
FC145 ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-25
FC-145 EPSONTOYOCOM

获取价格

kHz RANGE CRYSTAL UNIT LOW PROFILE SMD
FC146 ETC

获取价格

TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-25
FC147 ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-25VAR
FC148 ETC

获取价格

TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-25VAR
FC149 SANYO

获取价格

Low-Frequency General-Purpose Amp, Driver Applications
FC14970 CREE

获取价格

Florentina series
FC14971 CREE

获取价格

Florentina series