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FC140 PDF预览

FC140

更新时间： 2024-11-11 22:40:51
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
3页 101K
描述
High-Speed Switching Applications

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FC140 数据手册

 浏览型号FC140的Datasheet PDF文件第2页浏览型号FC140的Datasheet PDF文件第3页 
Ordering number:EN3361  
FC140  
NPN Epitaxial Planar Silicon Composite Transistor  
High-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Composite type with 2 transistors contained in the  
CP package currently in use, improving the mount-  
ing efficiency greatly.  
2074  
[FC140]  
· Small output capacitance, high gain-bandwidth  
product.  
· The FC140 is formed with two chips, being equiva-  
lent to the 2SC4452, placed in one package.  
Electrical Connection  
B1:Base 1  
E1:Emitter 1  
E2:Emitter 2  
C2:Collector 2  
B2:Base 2  
C1:Collector 1  
Specifications  
SANYO:CP6  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
40  
V
V
CBO  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
40  
CES  
V
15  
V
CEO  
V
5
V
EBO  
I
200  
mA  
mA  
mA  
mW  
mW  
˚C  
C
Collector Current (Pulse)  
Base Current  
I
500  
40  
CP  
I
B
Collector Dissipation  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
P
C
P
T
1 unit  
200  
300  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
max  
0.1  
Collector Cutoff Current  
I
V
V
V
=20V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=3V, I =0  
C
0.1  
EBO  
h
=1V, I =10mA  
90  
240  
FE  
C
DC Current Gain Ratio  
h
VCE=1V, IC=10mA  
0.6  
0.98  
FE(small/  
large)  
Gain-Bandwidth Product  
Output Capacitance  
C-E Saturation Voltage  
B-E Saturation Voltage  
C-B Breakdown Voltage  
C-E Breakdown Voltage  
E-B Breakdown Voltage  
Turn-ON Time  
f
V
V
I
=10V, I =10mA  
C
=5V, f=1MHz  
450  
750  
1.4  
MHz  
pF  
V
T
CE  
CB  
Cob  
4.0  
0.25  
0.85  
V
=10mA, I =1mA  
B
=10mA, I =1mA  
B
=10µA, I =0  
E
0.13  
0.80  
CE(sat)  
BE(sat)  
C
V
I
I
I
I
V
C
C
C
V
V
V
40  
15  
5
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
=1mA, R =∞  
V
BE  
=10µA, I =0  
V
E
C
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
8.0  
6.0  
12  
ns  
ns  
ns  
on  
Storage Time  
t
stg  
Turn-OFF Time  
t
off  
Note:The specifications shown above are for each individual transistor.  
Marking:140  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/4180MO, TS No.3361-1/3  
123

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