Datasheet > FBAS40DW-05

FBAS40DW-05

更新时间： 2024-02-14 00:45:53

品牌	Logo	应用领域
江苏长电/长晶 - CJ		二极管
页数	文件大小	规格书
4页	226K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

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中文翻译

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技术参数
数据手册

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FBAS40DW-05 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.59
Base Number Matches：	1

FBAS40DW-05 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-06C Plastic-Encapsulate Diode

FBAS40DW-05

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

WBFBP-06C

(2×2×0.5)

unit: mm

DESCRIPTION

Silicon epitaxial planar

PN Junction Guard Ring for Schottky Diode

FEATURES

Low Forward Voltage Drop

Fast Switching

Ultra-Small Surface Mount Package

APPLICATION

For General Purpose Switching Applications, rectifiers

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

FBAS40DW-05

Marking:K45

Maximum Ratings @T_A=25℃

Parameter

Symbol

Limits

Unit

Peak Repetitive reverse voltage

DC Blocking Voltage

V_RM

V_R

Average Rectified Output Current

Power Dissipation

I_O

℃/W

℃

150

Thermal Resistance. Junction to Ambient Air

Junction temperature

R_θJA

T_J

625

125

Storage temperature range

T_STG

-65-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Reverse voltage leakage current

Symbol

I_R

Test conditions

V_R=30V

MIN

MAX

200

UNIT

I_F=1mA

380

Forward

Total

voltage

V_F

C_T

t _{r r}

I_F=40mA

1000

capacitance

V_R=0,f=1MHz

I_F= I_R=10mA,Irr=0.1×I_R,

Reverse recovery time

R_L=100Ω

12 3 4

中文翻译

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